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Reliability of Memory Storage System Using Decimal Matrix Code and Meta-Cure

Iswarya Gopal, Rajasekar .T,

Transient multiple cell upsets (MCUs) are becoming major issues in the reliability of memories exposed to radiation environment. To prevent MCUs from causing data corruption, more complex error correction codes (ECCs) are widely used. The soft error rate in memory cells Multiple Cell Upset (MCU) are rapidly increasing. MCU have become a serious reliability issue in the memory. A novel Decimal Matrix Code (DMC) based on divide- symbol is proposed to enhance memory reliability with lower delay overhead. The proposed DMC utilizes decimal algorithm to obtain the maximum error detection capability. The Encoder-Reuse Technique (ERT) is proposed to minimize the area overhead of extra circuits without disturbing the whole encoding and decoding processes. ERT uses DMC encoder itself to be a part of the decoder. The increasing density of NAND flash memory leads to a dramatic increase in the bit error rate of flash, which greatly reduces the ability of error correcting codes (ECC) to handle multibiterrors.Meta-Cure exploits built-in ECC and replication in order to protect pages containing critical data, such as file system metadata. Redundant pairs are formed at run time and distributed to different physical pages to protect against failure.